Because of the crystalline
structure and bonds of the crystal in the (100) silicon, material (silicon) is selectively removed
(or etched) along the (100) and (111) planes, leaving the desired cavity. The etch occurs both
vertically (down the (100) planes) and sideways (along the (111) planes) at an etch rate of 400:1,
meaning that the vertical etch of the (100) plane is 400 times faster than the sideways etch of the
(111) plane. This is because the lattice of the (111) plane is the denser or has more silicon atoms
on its surface than the surface of the (100) planes. The angle of the (111) plane is always 54.74°
relatively to the (100) plane in a silicon crystal. The predictability of this chemical reaction on a
monocrystalline silicon wafer allows for a micro-cavity that can be used for many purposes.